NDT456P Rectifier Diode P-Channel Enhancement Mode Field Effect Transistor

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NDT456P Rectifier Diode P-Channel Enhancement Mode Field Effect Transistor

Name: NDT456P Rectifier Diode PChannel Enhancement Mode Field Effect Transistor
Brand: FAIRCHILD
Price: 1 USD

Brand Name : FAIRCHILD

Model Number : NDT456P

Certification : Original Factory Pack

Place of Origin : Philippines

MOQ : 20

Price : Negotiate

Payment Terms : T/T, Western Union,Paypal

Supply Ability : 20000

Delivery Time : 1

Packaging Details : please contact me for details

Description : P-Channel 30 V 7.5A (Ta) 3W (Ta) Surface Mount SOT-223-4

Drain-Source Voltage : 30 V

Gate-Source Voltage : ±20 V

Drain Current : ±7.5 A

Operating and Storage Temperature Range : -65 to 150 °C

Thermal Resistance, Junction-to-Ambien : 42 °C/W

Thermal Resistance, Junction-to-Case : 12 °C/W

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NDT456P P-Channel Enhancement Mode Field Effect Transistor

Features

♦-7.5 A, -30 V. RDS(ON) = 0.030 W @ VGS = -10 V RDS(ON) = 0.045 W @ VGS = -4.5 V

♦High density cell design for extremely low RDS(ON)

♦High power and current handling capability in a widely used surface mount package.

General Description

Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management, battery powered circuits, and DC motor control.

Symbol	Parameter	NDT456P	Units
V_DSS	Drain-Source Voltage	-30	V
V_GSS	Gate-Source Voltage	±20	V
TJ ,TSTG	Operating and Storage Temperature Range	65 to 150	°C
RqJA	Thermal Resistance, Junction-to-Ambient (Note 1a)	42	°C/W
RqJC	Thermal Resistance, Junction-to-Case (Note 1)	12	°C/W

Product Tags:

diode rectifier circuit

signal schottky diode

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