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N - Channel 600 V 2.0 Ohm rf high Power Mosfet Transistor NDD04N60ZT4G

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N - Channel 600 V 2.0 Ohm rf high Power Mosfet Transistor NDD04N60ZT4G

Brand Name : ONSEMI

Model Number : NDD04N60ZT4G

Certification : Original Factory Pack

Place of Origin : Original

MOQ : 5pcs

Price : Negotiation

Payment Terms : T/T, Western Union,PayPal

Supply Ability : 290PCS

Delivery Time : 1 Day

Packaging Details : please contact me for details

Description : N-Channel 600 V 4.1A (Tc) 83W (Tc) Surface Mount DPAK

VDSS : 600 V

ID : 4.8- 4.1 A

IDM : 20 A

PD : 30- 83 W

VGS : ±30 V

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N - Channel 600 V 2.0 Ohm rf high Power Mosfet Transistor NDD04N60ZT4G

Features

• Low ON Resistance

• Low Gate Charge

• ESD Diode−Protected Gate

• 100% Avalanche Tested

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES.

3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE.

5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY.

6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H.

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Product Tags:

power mosfet ic

      

multi emitter transistor

      
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